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IPA65R099C6XKSA1

Part No IPA65R099C6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 38A TO220 / N-Channel 650 V 38A (Tc) 35W (Tc) Through Hole PG-TO220-3-111
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 127 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 100 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Package / Case TO-220-3 Full Pack
Base Product Number IPA65R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names INFINFIPA65R099C6XKSA1,SP000895220,2156-IPA65R099C6XKSA1-IT
Standard Package 500
Win Source Part Number 1002173-IPA65R099C6XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA65R099C6XKSA1 CAD Model

Description

The IPA65R099C6XKSA1 is a CoolMOS series N-channel MOSFET from Infineon Technologies packaged in a TO-220-3 full pack package.

  • MOSFET Type: N-Channel
  • Package: TO-220-3 Full Pack
  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 38A (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
  • Temperature Range: -55°C ~ 150°C (TJ)

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