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IPA65R280E6

Name: IPA65R280E6
Brand: Infineon Technologies
SKU: 158165
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPA65R280E6
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 13.8A TO220
Datasheet	IPA65R280E6 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	650V
Continuous Drain Current at 25°C	13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	3.5V @ 440μA
Max Gate Charge	45nC @ 10V
Max Input Capacitance	950pF @ 100V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	32W (Tc)
Maximum Rds On at Id,Vgs	280 mOhm @ 4.4A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO-220-FP
Dimension	TO-220-3 Full Pack
Win Source Part Number	068956-IPA65R280E6
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IPA65R280E6 CAD Model

Description

The IPA65R280E6 is an N-channel MOSFET manufactured by Infineon Technologies.

Package: PG-TO-220-FP
Mounting Type: through-hole
Maximum Drain-Source Breakdown Voltage: 650V
Continuous Drain Current: 13.8A (Tc) @ 25°C
Maximum Gate- Source Voltage: ±20V
Maximum Rds On @ Id,Vgs: 280 mOhm @ 4.4A, 10V
Product Line: Infineon Technologies
Status: active

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
19+	$3.1721	$60.2699
45+	$2.6028	$117.1260
69+	$2.5215	$173.9835
95+	$2.4402	$231.8190
123+	$2.3587	$290.1201
164+	$2.1148	$346.8272

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 26,758 pieces

MOQ: 19 pcs

Order Increment : 1 pcs

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