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Same model may have multiple batches, images only for reference.
IPA65R380E6 Real Image
Same model may have multiple batches, images only for reference.

IPA65R380E6

Part No IPA65R380E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10.6A TO220
Datasheet
IPA65R380E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068958-IPA65R380E6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA65R380E6 CAD Model

Description

The Infineon Technologies 068958-IPA65R380E6 is a medium popularity electronic component that is a MOSFET technology product with an N-Channel polarity.

  • Power Dissipation: 31W (Tc)
  • Case / Package: PG-TO-220-FP
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 10.6A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 320μA
  • Maximum Gate Charge: 39nC @ 10V
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 3.2A, 10V
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: tube/rail
  • Mounting: through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3221 $51.0862
53+ $1.9054 $100.9862
82+ $1.8458 $151.3556
112+ $1.7863 $200.0656
145+ $1.7267 $250.3715
194+ $1.5481 $300.3314
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Availability: 38,984 pieces
MOQ: 22 pcs
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