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IPA65R400CEXKSA1

Part No IPA65R400CEXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V TO220 / N-Channel 650 V 15.1A (Tc) 31W (Tc) Through Hole PG-TO220-FP
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
FET Feature Super Junction
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package PG-TO220-FP
Case / Package TO-220-3 Full Pack
Base Product Number IPA65R400
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SP001429766
Standard Package 50
Win Source Part Number 1324734-IPA65R400CEXKSA1
Ultra Librarian 3D Model Ultra Librarian IPA65R400CEXKSA1 CAD Model

Description

The Infineon Technologies IPA65R400CEXKSA1 is a super junction N-channel MOSFET transistor.

  • Applications: power supplies, motor control, and lighting
  • Drain to Source Voltage: 650V
  • Current Continuous Drain: 15.1A @ 25°C
  • Rds On (Max): 400mOhm @ 3.2A and 10V
  • Gate Charge: 39nC @ 10V
  • Package: PG-TO220-FP package
  • Operating Temperature: -55°C to 150°C
  • Reliable and Efficient: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7295 $58.3600
195+ $0.5987 $116.7465
300+ $0.5800 $174.0000
415+ $0.5613 $232.9395
535+ $0.5425 $290.2375
715+ $0.4864 $347.7760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,162 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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