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Same model may have multiple batches, images only for reference.
IPA65R600E6 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA65R600E6

Part No IPA65R600E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO220
Datasheet
IPA65R600E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 210μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1045744-IPA65R600E6
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPA65R600E6 CAD Model

Description

The Infineon Technologies 1045744-IPA65R600E6 is a high-performance N-channel MOSFET transistor designed for use in various applications.

  • Channel Type: N-channel
  • Mounting: Through-Hole
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 7.3A
  • Gate-Source Threshold Voltage: 3.5V @ 210μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 440pF @ 100V
  • Maximum Rds On @ Id, Vgs: 600 mOhm @ 2.1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7594 $52.7820
70+ $1.4437 $101.0590
110+ $1.3985 $153.8350
150+ $1.3534 $203.0100
195+ $1.3083 $255.1185
260+ $1.1730 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,910 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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