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Same model may have multiple batches, images only for reference.
IPB011N04L G Real Image
Same model may have multiple batches, images only for reference.

IPB011N04L G

Part No IPB011N04L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 180A TO263-7
Datasheet
IPB011N04L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 200μA
Max Gate Charge 346nC @ 10V
Max Input Capacitance 29000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 1.1 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-3
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 143091-IPB011N04L G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB011N04L G CAD Model

Description

The Infineon Technologies 143091-IPB011N04L G is a N-Channel MOSFET that comes in PG-TO263-7-3 package.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 180A @ 25°C
  • Power Dissipation: 250W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 200μA
  • Max Gate Charge: 346nC @ 10V
  • Maximum Rds On: 1.1 mOhm @ 100A, 10V
  • Maximum Input Capacitance: 29000pF @ 20V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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