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Same model may have multiple batches, images only for reference.
Infineon TechnologiesIPB011N04LGATMA1
Same model may have multiple batches, images only for reference.

IPB011N04LGATMA1

Part No IPB011N04LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 180A TO263-7
Datasheet
IPB011N04LGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1196583-IPB011N04LGATMA1
Win Source Part Number Cross
Manufacturer IPB011N04LGATMA1
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series OptiMOS™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Ultra Librarian 3D Model Ultra Librarian IPB011N04LGATMA1 CAD Model

Description

The IPB011N04LGATMA1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Infineon Technologies.

  • Series: OptiMOS™
  • Channel Type: N-channel
  • Drain-to-Source Voltage Rating: 40V
  • Continuous Drain Current Rating (@ 25°C): 180A
  • Mounting Type: Surface Mount
  • Package: Tape & reel

With its high current handling capability and low on-resistance, the IPB011N04LGATMA1 is ideal for power electronics applications.

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Quantity Unit Price Ext. Price
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18+ $6.6967 $120.5406
27+ $6.4865 $175.1355
37+ $6.2774 $232.2638
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64+ $5.4412 $348.2368
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Availability: 7,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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