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Same model may have multiple batches, images only for reference.
IPB021N06N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB021N06N3GATMA1

Part No IPB021N06N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO263-3
Datasheet
IPB021N06N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 196μA
Max Gate Charge 275nC @ 10V
Max Input Capacitance 23000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 2.1 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045754-IPB021N06N3GATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB021N06N3GATMA1 CAD Model

Description

The Infineon Technologies 1045754-IPB021N06N3GATMA1 is a MOSFET transistor with a N-Channel polarity.

  • FET Type: N-Channel
  • Power Dissipation (Max) @ Tc: 250 W
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Voltage - Drain to Source Breakdown (Vdss): 60 V
  • Vgs(th) (Max) @ Id: 4V @ 196μA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) @ Vds: 23000 pF @ 30 V
  • Package / Case: PG-TO263-2
  • Supply and Demand Status: Sufficient

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