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Same model may have multiple batches, images only for reference.
IPB022N04LGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB022N04LGATMA1

Part No IPB022N04LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO263-3
Datasheet
IPB022N04LGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 95μA
Max Gate Charge 166nC @ 10V
Max Input Capacitance 13000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 124892-IPB022N04LGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB022N04LGATMA1 CAD Model

Description

The Infineon Technologies IPB022N04LGATMA1 is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current: 90A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 95μA
  • Maximum Gate Charge: 166nC @ 10V
  • Maximum Rds On at Id,Vgs: 2.2 mOhm @ 90A, 10V
  • Technology: MOSFET
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 167W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case / Package: PG-TO263-2
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Status: Obsolete (EOL)
  • Category: Discrete Semiconductor Products

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