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Same model may have multiple batches, images only for reference.
IPB023N04NG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB023N04NG

Part No IPB023N04NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 20 V
Power Dissipation (Max) 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1003636-IPB023N04NG
Ultra Librarian 3D Model Ultra Librarian IPB023N04NG CAD Model

Description

The 1003636-IPB023N04NG is a N-Channel MOSFET transistor from the OptiMOS™3 series and manufactured by Infineon Technologies.

  • Drain-to-Source Voltage Rating: 40V
  • Continuous Drain Current Rating: 90A
  • Rds On (Max): 2.3mOhm @ 90A and 10V
  • Mounting: surface mountable
  • Package: TO-263-3, D²Pak package.
  • Gate Charge: 120nC @ 10V
  • Input Capacitance: 10000pF @ 20V

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