The Infineon Technologies IPB026N06NATMA1 is a MOSFET transistor with a N-Channel polarity.

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current: 25A (Ta), 100A (Tc) @ 25°C
• Power Dissipation (Max): 3W (Ta), 136W (Tc)
• Gate-Source Threshold Voltage: 2.8V @ 75μA
• Max Gate Charge: 56nC @ 10V
• Max Input Capacitance: 4100pF @ 30V
• Package: PG-TO263-3
• Category: Discrete Semiconductor Products
• Temperature Range - Operating: -55°C to 175°C (TJ)
• Maximum Rds On at Id,Vgs: 2.6 mOhm @ 100A, 10V
• Supply and Demand Status: Balance