The Infineon Technologies IPD60R450E6ATMA1 MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 600V, continuous drain current of 9.2A (Tc), and maximum Rds On of 450 mOhm @ 3.4A, 10V.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 9.2A (Tc)
• Maximum Rds On: 450 mOhm @ 3.4A, 10V
• Maximum Power Dissipation: 74W (Tc)
• Operating Temperature: -55°C to 150°C (TJ)
• Package: PG-TO252-3
• Package Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 3.5V @ 280μA