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Same model may have multiple batches, images only for reference.
IPB027N10N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB027N10N3GATMA1

Part No IPB027N10N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO263-3
Datasheet
IPB027N10N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 275μA
Max Gate Charge 206nC @ 10V
Max Input Capacitance 14800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045758-IPB027N10N3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB027N10N3GATMA1 CAD Model

Description

The Infineon Technologies IPB027N10N3GATMA1 is an N-Channel MOSFET transistor that comes in a PG-TO263-2 package.

  • Case/Package: PG-TO263-2
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 120A @ 25°C
  • Maximum Power Dissipation: 300W
  • Gate-Source Threshold Voltage: 3.5V @ 275μA
  • Maximum Gate Charge: 206nC @ 10V
  • Maximum Rds On: 2.7 mOhm @ 100A and 10V

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35+ $2.8717 $100.5095
55+ $2.7747 $152.6085
78+ $2.5806 $201.2868
101+ $2.4836 $250.8436
126+ $2.3866 $300.7116
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