The IPB029N06N3G is a CoolMOS™ power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, offering low on-resistance (RDS(on)) and fast switching speeds. This MOSFET is commonly used in switched-mode power supplies (SMPS), DC-DC converters, and motor control applications.

Applications

• Switched-Mode Power Supplies (SMPS): Used as the switching element in SMPS.
• DC-DC Converters: Found in DC-DC converters for voltage regulation.
• Motor Control: Used in motor control circuits for efficient power switching.
• Uninterruptible Power Supplies (UPS): Employed in UPS systems for efficient power conversion.
• Renewable Energy Systems: In solar inverters and wind turbine converters for power conversion.

Features

• CoolMOS™ Technology: Provides low on-resistance and fast switching speeds.
• Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
• Fast Switching Speed: Reduces switching losses.
• Avalanche Rated: Withstands avalanche conditions.
• Pb-Free Package: TO-263 (D²PAK) package.
• Logic Level: Logic level gate drive
• VDS (Drain-Source Voltage): 60V.
• ID (Drain Current): 120A drain current capability.

Benefits

• High Efficiency: Low on-resistance and fast switching speed minimize power losses.
• Improved Thermal Performance: Reduces heat generation.
• Increased System Reliability: Avalanche rating ensures reliable operation.
• Simplified Design: Easier to design with due to its performance characteristics.
• Environmentally Friendly: Pb-free package complies with environmental regulations.

Technical Specifications

The IPB029N06N3G CoolMOS™ power MOSFET has a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating of 120A. It features a low on-resistance (RDS(on)), typically around 2.9 mOhms. The device is available in a TO-263 (D²PAK) package and is lead-free. The operating temperature range is typically -55°C to +175°C. Gate threshold voltage is logic level compatible.