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Same model may have multiple batches, images only for reference.
IPB042N10N3GE8187ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB042N10N3GE8187ATMA1

Part No IPB042N10N3GE8187ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO263-3
Datasheet
IPB042N10N3GE8187ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 150μA
Max Gate Charge 117nC @ 10V
Max Input Capacitance 8410pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 138523-IPB042N10N3GE8187ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB042N10N3GE8187ATMA1 CAD Model

Description

The Infineon Technologies 138523-IPB042N10N3GE8187ATMA1 is an N-Channel MOSFET with a maximum drain-source breakdown voltage of 100V and a continuous drain current of 100A at 25°C.

  • Type: N-Channel MOSFET
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Power Dissipation: 214W
  • Gate-Source Threshold Voltage: 3.5V @ 150μA
  • Maximum Gate Charge: 117nC @ 10V
  • Maximum Input Capacitance: 8410pF @ 50V
  • Operating Temperature: -55°C to 175°C
  • Package: PG-TO263-3

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