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Same model may have multiple batches, images only for reference.
IPB048N06LG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB048N06LG

Part No IPB048N06LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 30 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO-263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 216 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1065207-IPB048N06LG
Ultra Librarian 3D Model Ultra Librarian IPB048N06LG CAD Model

Description

The OptiMOS® 1065207-IPB048N06LG is a N-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 100A
  • Rds On (Max) @ 100A and 10V: 4.7mOhm
  • Gate Charge (Qg) @ 10V: 225nC
  • Input Capacitance (Ciss) @ 30V: 7600pF
  • Operating Temperature Range: -55°C to 175°C
  • Mounting: Surface Mount
  • Package: TO-263-3, D²Pak
  • Manufacturer: Infineon Technologies
  • Product Status: Active

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