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Same model may have multiple batches, images only for reference.
IPB050N06NGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB050N06NGATMA1

Part No IPB050N06NGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO-263
Datasheet
IPB050N06NGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 167nC @ 10V
Max Input Capacitance 6100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045765-IPB050N06NGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB050N06NGATMA1 CAD Model

Description

The Infineon Technologies IPB050N06NGATMA1 is an N-channel MOSFET transistor suitable for various applications, including power supplies, motor control, and lighting.

  • Maximum Drain-Source Voltage: 60V
  • Continuous Drain Current (25°C): 100A @ 25°C
  • Rds On: 4.7 mOhm @ 100A and 10Vgs
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 175°C
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.7387 $63.1257
25+ $4.7087 $117.7175
38+ $4.5616 $173.3408
53+ $4.4144 $233.9632
68+ $4.2673 $290.1764
91+ $3.8258 $348.1478
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,900 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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