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Same model may have multiple batches, images only for reference.
IPB081N06L3 G Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

IPB081N06L3 G

Part No IPB081N06L3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPB081N06L3 G Infineon Technologies MOSFETs N-Ch 60V 50A D2PAK-2 OptiMOS 3 datasheet, inventory, & pricing.
Datasheet
IPB081N06L3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
REACH - SVHC Details
Technology Si
Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 6.7 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 29 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 79 W
Channel Mode Enhancement
Tradename OptiMOS
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 7 ns
Forward Transconductance - Min 35 S
Product Type MOSFETs
Rise Time 26 ns
Series OptiMOS 3
Factory Pack Quantity Factory Pack Quantity 1000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 37 ns
Typical Turn-On Delay Time 15 ns
Part # Aliases IPB81N6L3GXT SP000398076 IPB081N06L3GATMA1
Unit Weight 0.139332 oz
Ultra Librarian 3D Model Ultra Librarian IPB081N06L3 G CAD Model

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