The IPB083N10N3GATMA1 is a N-channel MOSFET transistor from Infineon Technologies.

• Channel Type: N-Channel
• Type: MOSFET Transistor
• Application: Discrete Semiconductor Products, FETs and MOSFETs
• Voltage - Drain to Source (Vdss): 100 V
• Power Dissipation: 125W (Tc)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Vgs (Max): ±20V
• Temperature Range: -55°C to 175°C (TJ)
• Current - Continuous Drain (Id): 80A (Tc)
• Rds On (Max) @ Vgs, Id: 8.3mOhm @ 73A, 10V
• Input Capacitance (Ciss) @ Vds: 3980 pF @ 50 V
• Gate Charge (Qg) @ Vgs: 55 nC @ 10 V