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Same model may have multiple batches, images only for reference.
HUF75333S3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF75333S3S

Part No HUF75333S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 60A D2PAK
Datasheet
HUF75333S3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 85nC @ 20V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 66A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068290-HUF75333S3S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HUF75333S3S CAD Model

Description

The Fairchild/ON Semiconductor HUF75333S3S is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 66A (Tc) at 25°C.

  • Maximum Power Dissipation: 150W (Tc)
  • Maximum Rds On: 16 mOhm at 66A, 10V

The HUF75333S3S is designed for use in power management, motor drive & control, and audio applications. It comes in a D2PAK (TO-263AB) package and is mounted using SMD (SMT) technology. The transistor is obsolete(EOL) and has a medium popularity. The supply and demand status is limited.

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