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Same model may have multiple batches, images only for reference.
BUK7575-55A,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK7575-55A,127

Part No BUK7575-55A,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 20.3A TO220AB
Datasheet
BUK7575-55A,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 483pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025247-BUK7575-55A,127
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian BUK7575-55A,127 CAD Model

Description

The Nexperia USA Inc. BUK7575-55A,127 is a N-channel MOSFET discrete semiconductor product designed for through-hole mounting.

  • Type: N-channel MOSFET
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 20.3A (Tc)
  • Rds On @ Id,Vgs (Max): 75 mOhm @ 10A, 10V
  • Power Dissipation: 62W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Gate-Source Voltage (Max): ±20V
  • Input Capacitance (Max): 483pF @ 25V
  • Case/Package: TO-220AB
  • Dimensions: TO-220-3
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Quantity per Package: 50

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