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Same model may have multiple batches, images only for reference.
IPB10N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPB10N03LB G

Part No IPB10N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A D2PAK
Datasheet
IPB10N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1639pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 9.6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Dimension TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Win Source Part Number 1045776-IPB10N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB10N03LB G CAD Model

Description

The Infineon Technologies 1045776-IPB10N03LB G is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 50A at 25°C.

  • Maximum Power Dissipation: 58W (Tc)
  • Maximum Rds On: 9.6 mOhm @ 50A, 10V
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 13nC @ 5V
  • Case/Package: PG-TO263-3
  • Dimensions: TO-263AA
  • Suitable for: use in discrete semiconductor products.

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5+ $25.6479 $128.2395
7+ $24.8464 $173.9248
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17+ $20.8397 $354.2749
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