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Same model may have multiple batches, images only for reference.
IPB12CN10N G Real Image
Same model may have multiple batches, images only for reference.

IPB12CN10N G

Part No IPB12CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 67A TO263-3
Datasheet
IPB12CN10N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 83μA
Gate Charge (Qg) (Maximum) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4320pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 12.6 mOhm @ 67A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 776847-IPB12CN10N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB12CN10N G CAD Model

Description

The Infineon Technologies IPB12CN10N G is a MOSFET transistor manufactured by Infineon Technologies.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Current Rating: 67A
  • Maximum Voltage Rating: 100V
  • Power Dissipation: 125W
  • Gate Charge: 65nC
  • Halogen-Free: Yes
  • Popularity: Medium
  • Manufactured In: China
  • Status: Obsolete/End of Life

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