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IPB14N03LA G

Part No IPB14N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 8.3nC @ 5V
Max Input Capacitance 1043pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 13.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 101278-IPB14N03LA G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB14N03LA G CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-Channel power MOSFET that is designed for use in discrete semiconductor products.

  • Package: PG-TO263-3-2
  • Maximum Power Dissipation: 46W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 30A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 8.3nC @ 5V
  • Maximum Rds On @ Id, Vgs: 13.6 mOhm @ 30A, 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Technology: MOSFET
  • Polarity: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Maximum Input Capacitance: 1043pF @ 15V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.2398 $66.1990
11+ $10.8628 $119.4908
17+ $10.5244 $178.9148
23+ $10.1848 $234.2504
30+ $9.8452 $295.3560
40+ $8.8265 $353.0600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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