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IPB180N10S402ATMA1

Name: IPB180N10S402ATMA1
Brand: Infineon Technologies
SKU: 460938
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IPB180N10S402ATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH TO263-7
Datasheet	IPB180N10S402ATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	3.5V @ 275μA
Max Gate Charge	200nC @ 10V
Max Input Capacitance	14600pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	300W (Tc)
Maximum Rds On at Id,Vgs	2.5 mOhm @ 100A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO263-7-3
Dimension	TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number	1045784-IPB180N10S402ATMA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPB180N10S402ATMA1 CAD Model

Alternative Products

Description

The IPB180N10S402ATMA1 is an N-channel MOSFET transistor manufactured by Infineon Technologies.

Manufacturer: Infineon Technologies
Channel Type: N-channel
Power Dissipation (Max): 300W (Tc)
Continuous Drain Current (Id): 180A (Tc) @ 25°C
On-Resistance (Max): 2.5 mOhm @ 100A, 10V
Gate Charge (Qg): 200nC @ 10V
Input Capacitance (Ciss): 14600pF @ 25V
Gate-Source Threshold Voltage: 3.5V @ 275μA
Operating Temperature Range: -55°C to 175°C (TJ)
Package: PG-TO263-7-3
Mounting Type: SMD (SMT)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
14+	$4.2270	$59.1780
30+	$3.9543	$118.6290
46+	$3.8180	$175.6280
66+	$3.5453	$233.9898
85+	$3.4089	$289.7565
106+	$3.2726	$346.8956

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 24,900 pieces

MOQ: 14 pcs

Order Increment : 1 pcs

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