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IPB200N15N3

Part No IPB200N15N3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 75 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 746239-IPB200N15N3
Ultra Librarian 3D Model Ultra Librarian IPB200N15N3 CAD Model

Description

The OptiMOS™ 3 MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a high-performance electronic component designed for various applications in the field of discrete semiconductor products manufactured by Infineon Technologies.

  • FET Type: N-Channel
  • Vdss: 150V
  • Current Rating: 50A (Tc)
  • On-Resistance: 20mOhm @ 50A, 10V
  • Gate Charge (Qg): 31nC @ 10V
  • Input Capacitance (Ciss): 1820pF @ 75V
  • Package: TO-263-3
  • Power Dissipation: 150W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4442 $58.5514
41+ $2.8263 $115.8783
64+ $2.7374 $175.1936
88+ $2.6496 $233.1648
113+ $2.5606 $289.3478
151+ $2.2961 $346.7111
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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