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Same model may have multiple batches, images only for reference.
IPB230N06L3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB230N06L3GATMA1

Part No IPB230N06L3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A TO263-3
Datasheet
IPB230N06L3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 11μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 1600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045785-IPB230N06L3GATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB230N06L3GATMA1 CAD Model

Description

The IPB230N06L3GATMA1 is a high-performance N-channel MOSFET that is widely used in power management, automotive, and industrial applications.

  • Package: PG-TO263-2
  • Mounting Technology: SMD (SMT)
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 30A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 11μA
  • Maximum Gate Charge: 10nC @ 4.5V
  • Maximum Input Capacitance: 1600pF @ 30V
  • Maximum Rds On: 23 mOhm @ 30A and 10V
  • Product Status: Obsolete (EOL)

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