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IPB260N06N3GATMA1

Part No IPB260N06N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 27A TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 11μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 1200pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 25.7 mOhm @ 27A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045788-IPB260N06N3GATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB260N06N3GATMA1 CAD Model

Description

The Infineon Technologies 1045788-IPB260N06N3GATMA1 is a MOSFET technology-based electronic component that has a power dissipation of 36W (Tc).

  • Power Dissipation: 36W (Tc)
  • Package/Case: PG-TO263-2
  • Mounting Type: SMD (SMT)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 27A
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $96.5250 $96.5250
2+ $79.2001 $158.4002
3+ $76.7250 $230.1750
4+ $74.2500 $297.0000
5+ $71.7751 $358.8755
6+ $64.3501 $386.1006
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,930 pieces
Order Increment : 1 pcs
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