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Same model may have multiple batches, images only for reference.
IPB45N06S3-16 Real Image
Same model may have multiple batches, images only for reference.

IPB45N06S3-16

Part No IPB45N06S3-16
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 45A TO-263
Datasheet
IPB45N06S3-16 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 30μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 2980pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 15.4 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 119100-IPB45N06S3-16
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB45N06S3-16 CAD Model

Description

The IPB45N06S3-16 from Infineon Technologies is a N-Channel MOSFET transistor with a drain-source voltage of 55V.

  • Continuous Drain Current @ 25°C: 45A
  • Rds On (Max) @ Id, Vgs: 15.4 mOhm @ 23A, 10V
  • Gate-Source Threshold Voltage: 4V @ 30μA
  • Max Gate Charge: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 25V
  • Package: PG-TO263-3-2
  • Power Dissipation: 65W
  • Temperature Range: -55°C to 175°C
  • Popularity: High
  • Supply and Demand Status: Balanced

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