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Same model may have multiple batches, images only for reference.
IPB50CN10NGATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB50CN10NGATMA1

Part No IPB50CN10NGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A TO263-3
Datasheet
IPB50CN10NGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 20μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 1090pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 44W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045799-IPB50CN10NGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB50CN10NGATMA1 CAD Model

Description

The Infineon Technologies IPB50CN10NGATMA1 is an N-Channel MOSFET designed for use in high-performance power conversion applications.

  • FET Type: N-Channel
  • Power Dissipation (Max) @ Tc: 44 W
  • Voltage - Drain to Source Breakdown (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Vgs(th) (Max) @ Id: 4V @ 20μA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) @ Vds: 1090 pF @ 50 V
  • Package / Case: PG-TO263-3-2

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