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Same model may have multiple batches, images only for reference.
IPB60R230P6ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB60R230P6ATMA1

Part No IPB60R230P6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
IPB60R230P6ATMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P6
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 16.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 530µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 100 V
Power Dissipation (Max) 126W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-1
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Base Product Number IPB60R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1316198-IPB60R230P6ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB60R230P6ATMA1 CAD Model

Description

The IPB60R230P6ATMA1 is a N-channel MOSFET transistor from Infineon Technologies.

  • Channel Type: N-channel
  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 16.8 A
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
  • Power Dissipation: 126 W
  • Package: TO-263-4, D²Pak
  • Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C

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