The IPB60R230P6ATMA1 is a N-channel MOSFET transistor from Infineon Technologies. It is a high-performance transistor that is used in a variety of applications such as power supplies, motor control, and lighting. The transistor has a drain to source voltage of 600 V and a continuous drain current of 16.8 A. The Rds On (Max) @ Id, Vgs is 230mOhm @ 6.4A, 10V. The IPB60R230P6ATMA1 has a maximum power dissipation of 126 W and is packaged in a TO-263-4, D²Pak package. This transistor has a maximum gate-source voltage of ±20V and is rated for operation in temperatures ranging from -55°C to 150°C.