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Same model may have multiple batches, images only for reference.
IPB60R299CP Real Image
Same model may have multiple batches, images only for reference.

IPB60R299CP

Part No IPB60R299CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO-263
Datasheet
IPB60R299CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 124514-IPB60R299CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB60R299CP CAD Model

Description

The Infineon Technologies IPB60R299CP is a high-performance N-channel MOSFET ideal for use in a variety of applications such as power supplies, motor control, and lighting systems.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 11A
  • Maximum Rds On @ Id,Vgs: 299 mOhm @ 6.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Package: PG-TO263-3-2
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 96W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: In balance

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