The IPB65R099C6 is a CoolMOS™ Power MOSFET from Infineon Technologies. It's designed for high voltage switching applications requiring high efficiency and reliability. Part of the CoolMOS™ C6 series, this MOSFET is optimized for applications such as server and telecom power supplies, lighting, and industrial power systems.

Applications:

• Server power supplies
• Telecom power supplies
• LED lighting systems
• Industrial power systems
• Solar inverters

Features:

• Extremely low RDS(on) for reduced conduction losses.
• High avalanche ruggedness for enhanced reliability.
• Integrated gate resistor.
• Reduced switching losses.
• Pb-free lead finish; RoHS compliant.
• Available in a PG-TO263 package (D2PAK).

Benefits:

• Higher system efficiency leading to reduced energy consumption.
• Increased system reliability due to robust design.
• Simplified design with integrated gate resistor.
• Improved thermal performance in a compact D2PAK package.
• Environmentally friendly due to RoHS compliance.

Additional Details:

The IPB65R099C6 features a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 20.1A. The typical on-resistance (RDS(on)) is 0.099 Ohms. It utilizes Infineon's advanced CoolMOS™ technology to minimize switching losses and maximize efficiency. The integrated gate resistor helps to dampen oscillations and reduce EMI. The D2PAK package allows for efficient heat dissipation, improving overall system thermal performance. This MOSFET is specifically designed for demanding applications where efficiency and reliability are critical.