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Same model may have multiple batches, images only for reference.
IPB65R099C6ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB65R099C6ATMA1

Part No IPB65R099C6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 38A TO263
Datasheet
IPB65R099C6ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.2mA
Max Gate Charge 127nC @ 10V
Max Input Capacitance 2780pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 12.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 136466-IPB65R099C6ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB65R099C6ATMA1 CAD Model

Description

The Infineon Technologies IPB65R099C6ATMA1 is a high-performance N-channel MOSFET ideal for use in a variety of applications such as power supplies, motor control, and lighting systems.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 38A
  • Maximum Rds On @ Id,Vgs: 99 mOhm @ 12.8A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 1.2mA
  • Package: PG-TO263
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 278W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: Limited

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