The IPB65R110CFDA is a CoolMOS™ CFD7A series power MOSFET from Infineon Technologies. This MOSFET is specifically designed for resonant switching topologies, offering excellent efficiency and reliability. It is commonly used in applications requiring high power density and low switching losses.

Applications:

• Lighting (e.g., LED drivers, HID ballasts)
• Server and telecom power supplies
• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Induction heating
• Electric vehicle (EV) charging stations

Features:

• CoolMOS™ CFD7A technology
• Fast switching performance
• Low on-resistance (RDS(on))
• Integrated gate resistor (Rg)
• Reduced gate charge (Qg)
• Improved body diode ruggedness
• Pb-free lead plating; RoHS compliant

Benefits:

• High efficiency: CoolMOS™ CFD7A technology minimizes switching losses, leading to improved system efficiency and reduced heat generation.
• High power density: Low RDS(on) enables higher power levels in smaller packages.
• Increased system reliability: Improved body diode ruggedness ensures robust performance under demanding conditions.
• Simplified design: Integrated gate resistor simplifies gate drive design and reduces external component count.
• Reduced EMI: Fast switching performance is optimized to minimize electromagnetic interference (EMI).
• Environmentally friendly: Pb-free and RoHS compliant.

Technical Specifications:

• Voltage Rating: 650V
• RDS(on) (at VGS=10V): 110 mΩ (typical)
• Continuous Drain Current (ID): 19.9A (at TC=25°C)
• Gate Charge (Qg): 21 nC (typical)
• Package: PG-TO263-3
• Operating Temperature Range: -55°C to +150°C

The IPB65R110CFDA offers a compelling combination of performance, reliability, and ease of use, making it an excellent choice for resonant switching power supply designs. Consult the official Infineon datasheet for the most up-to-date and precise specifications.