The IPB65R280C6 is a CoolMOS™ C6 Power Transistor from Infineon Technologies. This is a high-performance, high-voltage N-channel MOSFET designed for use in switched-mode power supplies (SMPS) and other power conversion applications. It utilizes Infineon's advanced CoolMOS™ technology to achieve very low on-resistance and gate charge, resulting in improved efficiency and reduced power dissipation.

Applications:

• Switched Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• Flyback Converters
• Two-Transistor Forward Converters
• LCD and PDP TV Power Supplies

Features:

• 650V Breakdown Voltage
• Very Low On-Resistance RDS(on)
• Low Gate Charge Qg
• Integrated Gate Resistor RG
• Improved Switching Performance
• Increased System Reliability
• Pb-free Plating

Benefits:

• High Efficiency due to reduced conduction and switching losses
• Simplified Design with integrated gate resistor
• Improved Reliability and Robustness
• Lower System Cost
• Higher Power Density

Additional Details:

The IPB65R280C6 is available in a PG-TO263 package. It has a continuous drain current (ID) rating of 11A. It has a typical gate charge (Qg) of 26 nC and a very low on-resistance of 0.28 Ohms. The integrated gate resistor helps to reduce EMI and improve switching performance. This device is optimized for hard-switching topologies and offers significant performance improvements compared to traditional MOSFETs.