The IPB65R280C6ATMA1 is a CoolMOS™ C6 series power MOSFET from Infineon Technologies. This high-performance MOSFET is designed for a wide range of applications requiring high efficiency and power density. It leverages Infineon's advanced superjunction technology to minimize conduction and switching losses.

Applications

• Power factor correction (PFC) circuits
• Switched-mode power supplies (SMPS)
• DC-DC converters
• Motor drives
• Lighting applications
• Server and telecom power systems

Features

• 650V CoolMOS™ C6 technology
• Low on-resistance (R_DS(on))
• High commutation ruggedness
• Reduced gate charge (Q_g)
• Increased avalanche ruggedness
• Pb-free lead plating; RoHS compliant

Benefits

• Improved system efficiency due to lower conduction and switching losses
• Higher power density enabling smaller and lighter designs
• Increased system reliability due to high ruggedness
• Simplified thermal management
• Easy to design-in and use

Additional Details

The IPB65R280C6ATMA1 features a drain-source voltage (V_DS) rating of 650V and a typical on-resistance (R_DS(on)) of 0.28 Ohms. It is available in a TO-263 (D²PAK) package, which is suitable for surface mounting. The MOSFET is designed to operate at high switching frequencies and offers excellent performance in hard-switching topologies. The CoolMOS™ C6 technology provides a significant reduction in specific on-resistance and gate charge, leading to improved efficiency and lower operating temperatures. Its robust body diode helps to improve reliability.

This MOSFET is particularly well-suited for applications where high efficiency, power density, and reliability are critical. The reduced losses enable the design of more compact and efficient power supplies and converters. The device also incorporates integrated ESD protection.