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Same model may have multiple batches, images only for reference.
IPB65R660CFD Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB65R660CFD

Part No IPB65R660CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6A TO263
Datasheet
IPB65R660CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 200μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 615pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 660 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045813-IPB65R660CFD
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB65R660CFD CAD Model

Description

The Infineon Technologies IPB65R660CFD is an N-Channel MOSFET electronic component that is designed to offer a maximum drain-source breakdown voltage of 650V.

  • FET Type: N-Channel
  • Voltage - Drain to Source Breakdown (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Vgs(th) (Max) @ Id: 4.5V @ 200μA
  • Package / Case: PG-TO263
  • Power Dissipation (Max) @ Tc: 62.5 W
  • Gate-Source Voltage: ±20V
  • Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V
  • Lifecycle Status: Active

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