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Same model may have multiple batches, images only for reference.
IPB70N10SL16ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB70N10SL16ATMA1

Part No IPB70N10SL16ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO263-3
Datasheet
IPB70N10SL16ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 2mA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 4540pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045817-IPB70N10SL16ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB70N10SL16ATMA1 CAD Model

Description

The Infineon Technologies IPB70N10SL16ATMA1 is an N-channel MOSFET designed with a drain-source breakdown voltage of 100V and a continuous drain current of 70A at 25°C.

  • Maximum Rds On: 16 mOhm @ 50A, 10V
  • Power Dissipation: 250W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 2mA
  • Maximum Input Capacitance: 4540pF @ 25V
  • Case/Package: PG-TO263-3-2
  • Status: not for new designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $39.1695 $78.3390
4+ $32.1402 $128.5608
6+ $31.1353 $186.8118
8+ $30.1305 $241.0440
10+ $29.1268 $291.2680
14+ $26.1134 $365.5876
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Availability: 4,500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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