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Same model may have multiple batches, images only for reference.
IPB70N12S311ATMA1
Same model may have multiple batches, images only for reference.

IPB70N12S311ATMA1

Part No IPB70N12S311ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL_100+  /  
Datasheet
IPB70N12S311ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series *
Package Tape & Reel (TR)
Product Status Not For New Designs
Base Product Number IPB70N12
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001398604,INFINFIPB70N12S311ATMA1,2156-IPB70N12S311ATMA1
Standard Package 1,000
Win Source Part Number 964222-IPB70N12S311ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB70N12S311ATMA1 CAD Model

Description

The 964222-IPB70N12S311ATMA1 is a discrete semiconductor product that falls under the category of transistors - FETs, MOSFETs - Single.

  • Manufacturer: Infineon Technologies
  • Lifecycle Status: Not Suitable for New Designs
  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 120A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
  • FET Type: P-Channel
  • Maximum Vgs: ±16V
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Package: TO-220-3
  • RoHS Compliant: Yes
  • ECCN: EAR99

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