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Same model may have multiple batches, images only for reference.
IPB80N04S2-H4 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB80N04S2-H4

Part No IPB80N04S2-H4
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPB80N04 - 20V-40V N-CHANNEL AUT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 148 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 158295-IPB80N04S2-H4
Ultra Librarian 3D Model Ultra Librarian IPB80N04S2-H4 CAD Model

Description

The Infineon Technologies 158295-IPB80N04S2-H4 is a CoolMOS™ series transistor.

  • Series: CoolMOS™
  • Type: N-Channel MOSFET (Metal Oxide)
  • Vdss: 40V
  • Id: 80A (Tc) @ 25°C
  • Rds On (Max): 3.7mOhm @ 80A, 10V
  • Vgs(th): 4V @ 250µA
  • Power Dissipation: 300W (Tc)
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Qg: 148nC @ 10V
  • Ciss: 4400pF @ 25V
  • Operating Temperature Range: -55°C to 175°C
  • HTSUS Code: 8542.39.0001
  • Status: Active

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167+ $2.0855 $348.2785
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MOQ: 19 pcs
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