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IPB80N06S2L-11

Part No IPB80N06S2L-11
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPB80N06 - 55V-60V N-CHANNEL AUT
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2075 pF @ 25 V
Power Dissipation (Max) 158W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603392-IPB80N06S2L-11
Ultra Librarian 3D Model Ultra Librarian IPB80N06S2L-11 CAD Model

Description

The 603392-IPB80N06S2L-11 is a N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Application: discrete semiconductor products
  • Vdss (Drain to Source Voltage): 55 V
  • Id (Continuous Drain Current): 80A @ 25°C
  • Rds On (Maximum): 11mOhm @ 40A and 10V
  • Qg (Gate Charge): 80 nC @ 10V
  • Ciss (Input Capacitance): 2075 pF @ 25V
  • Operating Temperature Range: -55°C to 175°C
  • Package: surface mount (TO-263-3, D²Pak)
  • Package Quantity: 1 pcs
  • Status: active
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.8087 $67.2348
9+ $13.7919 $124.1271
13+ $13.3610 $173.6930
18+ $12.9291 $232.7238
24+ $12.4983 $299.9592
31+ $11.2058 $347.3798
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,020 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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