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IPB90N04S402ATMA1

Part No IPB90N04S402ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO263-3-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 95μA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 9430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 2.1 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045836-IPB90N04S402ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB90N04S402ATMA1 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current at 25°C: 90A
  • Gate-Source Threshold Voltage: 4V @ 95μA
  • Maximum Gate Charge: 118nC @ 10V
  • Package: PG-TO263-3-2
  • Maximum Power Dissipation: 150W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Product Status: Active

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