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IPD068N10N3GATMA1

Part No IPD068N10N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 90A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 90μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 4910pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 122380-IPD068N10N3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD068N10N3GATMA1 CAD Model

Description

The Infineon Technologies IPD068N10N3GATMA1 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 90A at 25°C.

  • Type: N-Channel MOSFET transistor
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 90A @ 25°C
  • Applications: discrete semiconductor products
  • Power Dissipation: 150W (Tc)
  • Mounting: SMD
  • Package: PG-TO252-3
  • Gate-Source Threshold Voltage: 3.5V @ 90μA
  • Rds On: 6.8 mOhm @ 90A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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