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Same model may have multiple batches, images only for reference.
IPD06N03LA G Real Image
Same model may have multiple batches, images only for reference.

IPD06N03LA G

Part No IPD06N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A DPAK
Datasheet
IPD06N03LA G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 115653-IPD06N03LA G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD06N03LA G CAD Model

Description

The Infineon Technologies IPD06N03LA G is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A @ 25°C
  • Rds On: 5.7 mOhm @ 30A, 10V
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 22nC @ 5V
  • Status: obsolete
  • Status: EOL
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and demand status: limited

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Quantity Unit Price Ext. Price
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720+ $0.1605 $115.5600
1,115+ $0.1559 $173.8285
1,540+ $0.1502 $231.3080
1,985+ $0.1455 $288.8175
2,655+ $0.1305 $346.4775
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