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IPD096N08N3G

Part No IPD096N08N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 73A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 46μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2410pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 9.6 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 068987-IPD096N08N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD096N08N3G CAD Model

Description

The Infineon Technologies IPD096N08N3G is a high-performance N-channel MOSFET designed for use in a variety of applications where a high-performance MOSFET is required.

  • Power dissipation: 100W
  • Continuous drain current: 73A
  • Package: PG-TO252-3
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8190 $53.2350
150+ $0.6720 $100.8000
235+ $0.6510 $152.9850
320+ $0.6300 $201.6000
415+ $0.6090 $252.7350
550+ $0.5460 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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