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IPD105N04LG

Name: IPD105N04LG
Brand: Infineon Technologies
SKU: 158350
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IPD105N04LG
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 40V 40A TO252-3
Datasheet	IPD105N04LG Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	40V
Continuous Drain Current at 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2V @ 14μA
Max Gate Charge	23nC @ 10V
Max Input Capacitance	1900pF @ 20V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	42W (Tc)
Maximum Rds On at Id,Vgs	10.5 mOhm @ 40A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	068990-IPD105N04LG
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPD105N04LG CAD Model

Alternative Products

Description

The Infineon Technologies 068990-IPD105N04LG is a N-Channel MOSFET transistor which is suitable for use in various applications.

Drain-Source Breakdown Voltage: 40V
Continuous Drain Current: 40A @ 25°C
Maximum Rds On: 10.5 mOhm @ 40A and 10V
Gate-Source Threshold Voltage: 2V @ 14μA
Maximum Gate Charge: 23nC @ 10V
Maximum Input Capacitance: 1900pF @ 20V
Maximum Gate-Source Voltage: ±20V
Package: PG-TO252-3
Power Dissipation: 42W (Tc)
Category: Discrete Semiconductor Product
Status: Now obsolete (EOL)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
120+	$0.4920	$59.0400
290+	$0.4031	$116.8990
445+	$0.3915	$174.2175
610+	$0.3788	$231.0680
790+	$0.3661	$289.2190
1,060+	$0.3280	$347.6800

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 7,000 pieces

MOQ: 120 pcs

Order Increment : 1 pcs

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