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Same model may have multiple batches, images only for reference.
FDR8508P
Same model may have multiple batches, images only for reference.

FDR8508P

Part No FDR8508P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3A SSOT-8
Datasheet
FDR8508P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 52 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 750pF @ 15V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-8
Win Source Part Number 067069-FDR8508P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDR8508P CAD Model

Description

The Fairchild/ON Semiconductor FDR8508P is a 2 P-Channel (Dual) FET that features a Logic Level Gate.

  • Popularity: High
  • Power Dissipation: 800mW
  • Drain-Source Breakdown Voltage: 30V
  • Package: SuperSOT-8
  • Maximum Rds On (Id,Vgs): 52 mOhm @ 3A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5810 $58.1000
245+ $0.4770 $116.8650
375+ $0.4620 $173.2500
520+ $0.4470 $232.4400
670+ $0.4320 $289.4400
900+ $0.3869 $348.2100
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Availability: 20,100 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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