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Same model may have multiple batches, images only for reference.
IPD127N06LGBTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD127N06LGBTMA1

Part No IPD127N06LGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO-252
Datasheet
IPD127N06LGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 80μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2300pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 12.7 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001845-IPD127N06LGBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD127N06LGBTMA1 CAD Model

Description

The Infineon Technologies IPD127N06LGBTMA1 is an N-channel MOSFET device that has a maximum power dissipation of 136W (Tc).

  • Maximum Power Dissipation: 136W (Tc)
  • Suitable for: Use in various applications that require N-channel MOSFET devices
  • Supply and Demand Status: Balance
  • Status: Not for new designs
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 50A (Tc)

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63+ $1.8563 $116.9469
97+ $1.7983 $174.4351
133+ $1.7403 $231.4599
172+ $1.6823 $289.3556
230+ $1.5082 $346.8860
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