The Infineon Technologies IPD13N03LA G MOSFET is a powerful N-Channel transistor with a drain-source breakdown voltage of 25V and a continuous drain current of 30A @ 25°C.

• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 30A @ 25°C
• Maximum Rds On @ Id,Vgs: 12.8 mOhm @ 30A, 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 2V @ 20μA
• Power Dissipation: 46W (Tc)
• Package: PG-TO252-3
• Suitable for: Use in various applications such as power supplies, motor control, and lighting